document number: 94518 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 11-mar-10 1 ultrafast rectifier, 2 x 5 a fred pt ? vs-murb1020ctpbf, VS-MURB1020CT-1PBF vishay high power products features ? ultrafast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? halogen-free according to iec 61249-2-21 definition ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified description/applications mur.. series are the state of the art ultrafast recovery rectifiers specifically design ed with optimized performance of forward voltage drop and ultrafast recovery time. the planar structure and th e platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc-to- dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary t rr 25 ns i f(av) 2 x 5 a v r 200 v v s -murb1020ctp b f d 2 pak to-262 v s -murb1020ct-1p b f ba s e common cathode common cathode a node 1 anode 2 2 12 3 ba s e common cathode common cathode anode 1 anode 2 2 12 3 absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 200 v average rectified forward current per leg i f(av) 5 a total device rated v r , t c = 149 c 10 non-repetitive peak surge current per leg i fsm 50 peak repetitive forward current per leg i fm rated v r , square wave, 20 khz, t c = 149 c 10 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 5 a, t j = 125 c - 0.87 0.99 i f = 10 a, t j = 125 c - 1.02 1.20 i f = 10 a, t j = 25 c - 1.12 1.25 reverse leakage current i r v r = v r rated - - 10 a t j = 150 c, v r = v r rated - - 250 junction capacitance c t v r = 200 v - 8 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94518 2 revision: 11-mar-10 vs-murb1020ctpbf, VS-MURB1020CT-1PBF vishay high power products ultrafast rectifier, 2 x 5 a fred pt ? dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - - 35 ns i f = 0.5 a, i r = 1.0 a, i rec = 0.25 v - - 25 t j = 25 c i f = 5 a di f /dt = 200 a/s v r = 160 v -24- t j = 125 c - 35 - peak recovery current i rrm t j = 25 c - 3.3 - a t j = 125 c - 5.0 - reverse recovery charge q rr t j = 25 c - 33 - nc t j = 125 c - 76 - thermal - mechanical specifications parameter symbol test conditio ns min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc --5 c/w thermal resistance, junction to am bient per leg r thja --50 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.5 - weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style d 2 pak murb1020ct case style to-262 murb1020ct-1
document number: 94518 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 11-mar-10 3 vs-murb1020ctpbf, VS-MURB1020CT-1PBF ultrafast rectifier, 2 x 5 a fred pt ? vishay high power products fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forward current (a) v f - forward voltage drop (v) 0.2 0.4 0.8 1.2 0.6 1.0 1.4 1.6 0.1 1 100 10 94518_01 t j = 175 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 94518_02 t j = 125 c t j = 175 c t j = 150 c t j = 100 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 100 10 94518_03 t j = 25 c 0.01 0.1 1 10 0.00001 94518_04 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 s ingle pul s e (thermal re s i s tance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 p dm t 2 t 1 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94518 4 revision: 11-mar-10 vs-murb1020ctpbf, VS-MURB1020CT-1PBF vishay high power products ultrafast rectifier, 2 x 5 a fred pt ? fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r allowa b le case temperature (c) i f(av) - average forward current (a) 6 4 2 8 0 170 180 130 150 160 140 94518_05 sq uare wave (d = 0.50) rated v r applied s ee note (1) dc average power loss (w) i f(av) - average forward current (a) 46 57 3 2 1 8 0 94518_06 6 7 0 2 4 3 5 1 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc rm s limit t rr (ns) di f /dt (a/s) 100 1000 10 50 20 40 30 94518_07 v r = 160 v t j = 125 c t j = 25 c i f = 10 a i f = 5 a q rr (nc) di f /dt (a/s) 100 1000 0 160 120 40 20 60 80 140 100 94518_08 i f = 10 a i f = 5 a v r = 160 v t j = 125 c t j = 25 c
document number: 94518 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 11-mar-10 5 vs-murb1020ctpbf, VS-MURB1020CT-1PBF ultrafast rectifier, 2 x 5 a fred pt ? vishay high power products fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94518 6 revision: 11-mar-10 vs-murb1020ctpbf, VS-MURB1020CT-1PBF vishay high power products ultrafast rectifier, 2 x 5 a fred pt ? ordering information table 2 - ultrafast mur series 3 - b = d 2 pak/to-262 4 - current rating (10 = 10 a) 5 - voltage rating (20 = 200 v) 6 - ct = center tap (dual) 7 - none = d 2 pak -1 = to-262 9 - pbf = lead (pb)-free (for to-262 and d 2 pak tube) p = lead (pb)-free (for d 2 pak trr and trl) 8 - none = tube (50 pieces) trl = tape and reel (left oriented, for d 2 pak package) trr = tape and reel (right oriented, for d 2 pak package) device code 5 1 3 24 6789 vs- mur b 10 20 ct -1 trl p 1 - hpp product suffix links to related documents dimensions www.vishay.com/doc?95014 part marking information www.vishay.com/doc?95008 packaging information www.vishay.com/doc?95032
document number: 95014 for technical questi ons concerning discr ete products, contact: diodes-tech@vishay.com www.vishay.com revision: 31-mar-09 for technical questi ons concerning module products, contact: ind-modules@vishay.com 1 d 2 pak, to-262 outline dimensions vishay high power products dimensions for d 2 pak in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") per side. these dimensions are measured at the outmost extremes of the plastic body (3) thermal pad contour optional within dimension e, l1, d1 and e1 (4) dimension b1 and c1 apply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) v ie w a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l ga u ge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: n one (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout mi n . 11.00 (0.43) mi n . 9.65 (0.3 8 ) mi n . 3. 8 1 (0.15) mi n . 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (t w o die)/open (one die) 2., 4. - cathode 3. - anode
www.vishay.com for technical questions c oncerning discrete products, contact: diodes-tech@vishay.com document number: 95014 2 for technical questions concer ning module products, contact: ind-modules@vishay.com revision: 31-mar-09 outline dimensions vishay high power products d 2 pak, to-262 dimensions for to-262 in millimeters and inches notes (1) dimensioning and tolerancing as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") per side. these dimensions are measured at the outmost extremes of the plastic body (3) thermal pad contour optional within dimension e, l1, d1 and e1 (4) dimension b1 and c1 apply to base metal only (5) controlling dimension: inches (6) outline conform to jedec to-262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b 1, b 3 ( b , b 2) c1 c section b - b and c - c scale: n one section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (dat u m a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b 2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (t w o die)/open (one die) 2., 4. - cathode 3. - anode
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